Description
The process of modifying material properties using ultrashort laser pulses conveys more importance than it seems due to the non-equilibrium Two-Temperature model that it discuss.
It is proven that there is improvement in electrical conductivity of low temperature synthesized 2D semiconductor thin-film ultra-short pulsed laser annealing (PLA). This process make use of a solid state diffusion process, uniquely achievable with single pulses of Femtosecond(fs) laser energy. The approach depends on several factors and incident fluence is most prominent among them and it is significantly lower than those typically required for the onset of damage or ablation. The main aspect of the interaction for ultrashort pulsed irradiation at these low fluence regimes is the generation of a thermal non-equilibrium between hot electrons and the cold lattice. The temperature of electrons is in the range of thousands of kelvin and follows a non-thermal distribution for few femtoseconds and the relaxation time of electrons with non-thermal electrons and Phonons collectively characterize the electron dynamics and equilibrates thereafter.
